attenu a tors - a n a log - chip 1 1 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc712 gaas mmic voltage-variable attenuator, 5 - 30 ghz v01.0709 general description features functional diagram wide bandwidth: 5 - 30 gh z e xcellent l inearity: +28 dbm i nput p 1db wide attenuation r ange: 30 db compact die s ize: 1.4 x 1.2 x 0.1 mm electrical specifcations, t a = +25 c, 50 ohm system typical applications t he h mc712 is ideal for: ? p oint-to- p oint r adio ? v s a t r adio ? t est i nstrumentation ? microwave s ensors ? military, e cm & r adar t he h mc712 die is an absorptive voltage variable attenuator (vva) which operates from 5 - 30 gh z and is ideal in designs where an analog dc control signal must be used to control r f signal levels over a 30 db amplitude range. i t features two shunt-type attenuators which are controlled by two analog voltages, vctrl1 and vctrl2. o ptimum linearity performance of the attenuator is achieved by frst varying vctrl1 of the 1st attenuation stage from -3v to 0v with vctrl2 fxed at -3v. t he control voltage of the 2nd attenuation stage, vctrl2, should then be varied from -3v to 0v, with vctrl1 fxed at 0v. h owever, if the vctrl1 and vctrl2 pins are connected together it is possible to achieve the full analog attenuation range with only a small degradation in input ip 3 performance. applications include a g c circuits and temperature compensation of multiple gain stages in microwave point-to-point and v s a t radios. p arameter min. t yp. max. u nits i nsertion l oss 5 - 16 gh z 16 - 24 gh z 24 - 30 gh z 2.5 3.5 4.5 db db db attenuation r ange 30 db i nput r eturn l oss 12 db o utput r eturn l oss 10 db i nput p ower for 1 db compression (any attenuation) 28 dbm i nput t hird o rder i ntercept ( t wo-tone i nput p ower = 10 dbm e ach t one) 32 dbm
attenu a tors - a n a log - chip 1 1 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com attenuation vs. vctrl2 over temperature @ 10 ghz, vctrl1 = 0v attenuation vs. frequency over vctrl vctrl1 = variable, vctrl2 = -3v attenuation vs. vctrl1 over temperature @ 10 ghz, vctrl2 = -3v attenuation vs. pin @ 10 ghz vctrl1 = variable, vctrl2 = -3v hmc712 v01.0709 gaas mmic voltage-variable attenuator, 5 - 30 ghz attenuation vs. frequency over vctrl vctrl1 = 0v, vctrl2 = variable -15 -10 -5 0 2 6 10 14 18 22 26 30 -3.0 v -1.8 v -1.4 v -0.8 v 0.0 v attenuation (db) frequency (ghz) -10 -8 -6 -4 -2 0 -3 -2.5 -2 -1.5 -1 -0.5 0 +25 c +85 c -55 c attenuation (db) vctrl1 (v) -10 -8 -6 -4 -2 0 0 5 10 15 20 -3.0 v -1.8 v -1.2 v -0.6 v 0.0 v attenuation (db) input power (dbm) -35 -30 -25 -20 -15 -10 -5 0 -3 -2.5 -2 -1.5 -1 -0.5 0 +25 c +85 c -55 c attenuation (db) vctrl2 (v) -50 -40 -30 -20 -10 0 2 6 10 14 18 22 26 30 -3.0 v -1.8 v -1.4 v -0.8 v 0.0 v attenuation (db) frequency (ghz)
attenu a tors - a n a log - chip 1 1 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com output return loss vctrl1 = 0v, vctrl2 = variable output return loss vctrl1 = variable, vctrl2 = -3v hmc712 v01.0709 gaas mmic voltage-variable attenuator, 5 - 30 ghz input return loss vctrl1 = 0v, vctrl2 = variable -40 -30 -20 -10 0 2 6 10 14 18 22 26 30 -3.0 v -1.6 v 0.0 v return loss (db) frequency (ghz) -30 -20 -10 0 2 6 10 14 18 22 26 30 -3.0 v -1.6 v 0.0 v return loss (db) frequency (ghz) -30 -20 -10 0 2 6 10 14 18 22 26 30 -3.0 v -1.6 v 0.0 v return loss (db) frequency (ghz) input return loss vctrl1 = variable, vctrl2 = -3v -50 -40 -30 -20 -10 0 2 6 10 14 18 22 26 30 -3.0 v -1.6 v 0.0 v return loss (db) frequency (ghz) insertion phase vs. vctrl2, vctrl1 = 0v -225 -180 -135 -90 -45 0 45 90 135 180 -3 -2.5 -2 -1.5 -1 -0.5 0 2 ghz 5 ghz 10 ghz 20 ghz 25 ghz insertion phase (degrees) vctrl 2 insertion phase vs. vctrl1, vctrl2 = -3v -180 -135 -90 -45 0 45 90 135 180 -3 -2.5 -2 -1.5 -1 -0.5 0 2 ghz 5 ghz 10 ghz 20 ghz 25 ghz insertion phase (degrees) vctrl 1
attenu a tors - a n a log - chip 1 1 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com input ip3 vs input power @ 10 ghz vctrl1 = variable, vctrl2 = -3v input ip3 vs. input power over frequency vctrl1 = -2.2v, vctrl2 = -3v (worst case ip3) hmc712 v01.0709 gaas mmic voltage-variable attenuator, 5 - 30 ghz input ip3 vs. input power over temperature @ 10 ghz, vctrl1 = -2.2v, vctrl2 = -3v attenuation vs. input power over vctrl vctrl1 = vctrl2 attenuation vs. vctrl over temperature @ 10 ghz, vctrl1 = vctrl2 attenuation vs. frequency over vctrl vctrl1 = vctrl2 20 25 30 35 40 0 5 10 15 20 10 ghz 15 ghz 20 ghz 25 ghz ip3 (dbm) single tone input power (dbm) 25 30 35 40 0 5 10 15 20 +25 c +85 c -55 c ip3 (dbm) single tone input power (dbm) 10 20 30 40 50 60 0 5 10 15 20 -3.0 v -2.4 v -2.2 v -1.8 v 0.0 v ip3 (dbm) single tone input power (dbm) -50 -40 -30 -20 -10 0 2 9 16 23 30 -3 v -1.8 v -1.4 v -0.8 v 0 v attenuation (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 5 10 15 20 -3 v -1.8 v -1.4 v -.8 v 0 v attenuation (db) input power (dbm) -40 -30 -20 -10 0 -3 -2.5 -2 -1.5 -1 -0.5 0 +25 c +85 c -40 c attenuation (db) control voltage (v)
attenu a tors - a n a log - chip 1 1 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc712 v01.0709 gaas mmic voltage-variable attenuator, 5 - 30 ghz absolute maximum ratings r f i nput p ower +30 dbm control voltage r ange +1 to -5v channel t emperature 150 c t hermal r esistance (channel to die bottom) 64 c/w s torage t emperature -65 to +150 c o perating t emperature -55 to +85 c ele c trost a ti c sensiti v e d e v i c e o b ser v e han d ling pre ca utions control voltages vctrl1 -3 to 0v @ 10 a vctrl2 -3 to 0v @ 10 a input ip3 vs. input power over vctrl @ 10 ghz, vctrl1 = vctrl2 0 10 20 30 40 50 60 0 5 10 15 20 -2.6 v -2.2 v -1.8 v -1.4 v 0 v ip3 (dbm) single tone input power (dbm) output return loss, vctrl1 = vctrl2 -40 -30 -20 -10 0 2 6 10 14 18 22 26 30 -3.0 v -1.8 v 0.0 v return loss (db) frequency (ghz) input return loss, vctrl1 = vctrl2 -40 -30 -20 -10 0 2 6 10 14 18 22 26 30 -3.0 v -1.8 v 0.0 v return loss (db) frequency (ghz)
attenu a tors - a n a log - chip 1 1 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc712 v01.0709 gaas mmic voltage-variable attenuator, 5 - 30 ghz outline drawing 1. a ll d i m ensions a re in in c hes (m illi m eters ). 2. t y pi ca l b on d p ad is .004 s q u a re . 3. t y pi ca l b on d p ad sp ac ing is .006 c enter to c enter e xc ept a s note d. 4. back si d e m et a li za tion : gol d 5. back si d e m et a l is groun d 6. b on d p ad m et a li za tion : gol d die packaging information [1] s tandard alternate gp -2 ( g el p ack) [2] [1] r efer to the p ackaging i nformation section for die packaging dimensions. [2] for alternate packaging information contact h ittite microwave corporation.
attenu a tors - a n a log - chip 1 1 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc712 v01.0709 gaas mmic voltage-variable attenuator, 5 - 30 ghz assembly diagram p ad n umber function description i nterface s chematic 1 r f in t his pad is dc coupled and matched to 50 o hms. a blocking capacitor is required if r f line potential is not equal to 0v. 2 r f out 3 vctrl2 control voltage 2 4 vctrl1 control voltage 1 gn d die bottom must be connected to r f/dc ground. pad descriptions
attenu a tors - a n a log - chip 1 1 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics t he die should be attached directly to the ground plane eutectically or with conductive epoxy (see h mc general h andling, mounting, bonding n ote). 50 o hm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing r f to and from the chip (figure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. t ypical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or g el based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. u se shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. t he surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting t he chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. t he mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o not expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. t hermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. u se the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.127mm (0.005) thick alumina thin film substrate 0.076mm (0.003) figure 1. 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab hmc712 v01.0709 gaas mmic voltage-variable attenuator, 5 - 30 ghz
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